Thermal investigation of radiation defects
Posted 29 Jan, 2009 in Animations
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| Contributor(s) | Greg Walker Vanderbilt University |
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| Abstract | Microelectronic devices (MOSFETs) were irradiated with heavy ions and subsequently damaged (gate rupture). By shorting the source and drain of the MOSFET and applying a voltage to the gate, the damaged devices will leak a tremendous amount of current. The current leakage will then heat up the device at the damaged locations, which can be detected with a thermal camera. In this video, two damage regions become apparent as the device is energized. The terminals and interconnects can be seen on the device as well. When the power is turned off, the device returns to a uniform, but elevated temperature. |
| credits | Andrew Sternberg of the Radiation Effects and Reliability group at Vanderbilt performed the irradiation. The thermal measurements were performed with equipment in the Thermal Engineering Lab at Vanderbilt |
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